Solid-State Electronics

Variation of the exponent of flicker noise in MOSFETS

D. R. Wolters^a and A. T. A. Zegers-van Duijnhoven^a

a. Philips Research Laboratories, WAG 1-1-18 5656 AA Eindhoven The Netherlands

Solid-State Electronics , Volume 42, Issue 5 , May 1998 , Pages 803-808

Abstract

We scrutinize the variation of the exponent of flicker noise in MOSFETs under thoroughly stabilized conditions. We find that the exponent of 1/f- noise varies nonsystematically with the electric properties of the transistors. Stochastic fluctuations of the exponent for a single MOSFET correlate with the noise intensity, as in the Dutta-Horn relationship, but in contrast our correlation applies for a single temperature. We show that this can be expected to be the case for a stabilized, non-drifting MOSFET. With the above correlation we can define an idealized Hooge law for pure 1/f noise, which is useful for modeling. In our view the variation of the exponent is inherent to the mechanism of flicker noise itself.

1/f in dynamical system models