1/f (One-Over-F) Noise in Electronic Devices: Semiconductors

I would like to thank Paras Dagli for making this list possible!

see also
1/f noise in electronic devices: review and modeling
1/f noise in electronic devices: the rest .

Acronyms: MOS - metal oxide semiconductos; MOSFET - metal oxide semiconductos field effect transistors;

    + 2007

  1. Ferdinand Gruneis (2007), "1/f noise due to the return statistics of mobile point defects in extrinsic semiconductor materials", Fluctuation and Noise Letters , 7(1):C1-C18.
    [ abstract]

  2. Giancarlo Cavalleri, Ernesto Tonni, Leonardo Bosi, Gianfranco Spavieri (2007). "Very long decay time for electron velocity distribution in semiconductors, and consequent 1/f noise", Fluctuation and Noise Letters, 7(3):L193-L207.

    + 2006

  3. J Muller, S von Molnar, Y Ohno, H Ohno (2006), "Decomposition of 1/f noise in Al(x)Ga(1-x)As/GaAs Hall devices", Physical Review Letters, 96(18):186601.

    + 2003

  4. Jonghwan Lee, Gijs Bosman (2003), "Defect spectroscopy using 1/fgamma noise of gate leakage current in ultrathin oxide MOSFETs", Solid-State Electronics, 47(11):1973-1981.

    + 2002

  5. M Fadlallah, G Ghibaudo, J Jomaah, M Zoaeter, G Guegan (2002), "Static and low frequency noise characterization of surface-and buried-mode 0.1 mu m P and N MOSFETs", Microelectronics Reliability, 42(1):41-46.

  6. DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ST Pantelides (2002), "Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices", IEEE Transactions on Nuclear Science, 49(6):2674-2683.

  7. S Haendler, J Jomaah, F Balestra (2002), "On the 1/f noise in 0.15 mm fully depleted SOI/MOS transistors", Fluctuation and Noise Letters , 2(3):L253-L256.

  8. J Jaroszynski, D Popovic, TM Klapwijk (2002), "Low-frequency resistance noise studies across the metal-insulator transition in silicon MOSFETs", Physica E, 12:612-615.

  9. HD Xiong, DM Fleetwood, BK Choi, AL Sternberg (2002), "Temperature dependence and irradiation response of 1/f-noise in MOSFETs", IEEE Transactions on Nuclear Science, 49(6):2718-2723.

    + 2001

  10. AP Dmitriev, E Borovitskaya, ME Levinshtein, SL Rumyantsev, MS Shur (2001), "Low frequency noise in degenerate semiconductors", Journal of Applied Physics, 90(1):301-305.

  11. Ferdinand Gruneis (2001), "1/f noise due to atomic diffusion of impurity centers in semiconductors", Fluctuation and Noise Letters, 1(4):L197-L220.

  12. R Kolarova, T Skotnicki, JA Chroboczek (2001), "Low frequency noise in thin gate oxide MOSFETs", Microelectronics Reliability, 41(4):579-585.

  13. SL Rumyantsev, N Pala, MS Shur, R Gaska, ME Levinshtein, MA Khan, G Simin, X Hu, J Yang (2001), "Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors", Journal of Applied Physics, 90(1):310-314.

  14. Masato Toita, Tomohiro Akaboshi, Hasaya Imai (2001), "1/f noise reduction in PMOSFETs by an additional preoxidation cleaning with an ammonia hydrogen peroxide mixture", IEEE Electron Device Letters, 22(11):548-550.
    [PDF]

    + 2000

  15. CH Chen, MJ Deen (2000), "Direct extraction of the channel thermal noise in MOSFETs from measurements of their RF noise parameters", Journal of Vacuum Science & Technology A, 18(2):757-760.

  16. WS Kwan, CH Chen, MJ Deen (2000), "Hot-carrier effects on RF noise characteristics of LDD MOSFETs", Journal of Vacuum Science & Technology A, 18(2):765-769.

    + 1999

  17. Zeynep Celik-Butler, P Vasina (1999), "Channel length scaling of 1/f noise in 0.18um technology MDD n-MOSFETs", Solid-State Electronics, 43(9):1695-1701.

  18. CG Jakobson (1999), "1/f noise in ion sensitive field effect transistors from subthreshold to saturation", IEEE Transactions on Electron Devices, 46(1):259-261

  19. UH Liaw, YK Su (1999), "1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors", Journal of Applied Physics, 85(12):8485-8489.
    [ abstract ]

  20. W Marshall Leach, Jr. (1999), "Noise relations for parallel connected transistors", Journal of the Audio Engineering Society. 47(3):112-118.

  21. MG Peters, JI Dijkhuis, LW Molenkamp (1999), "Random telegraph signals and 1/f noise in a silicon quantum dot", Journal of Applied Physics, 86(3):1523-1526.
    [ abstract]

  22. E Simoen and C Claeys (1999), "On the flicker noise in submicron silicon MOSFETs", Solid-State Electronics, 43:865-882.

  23. JC Vildeuil, M Valenza, D Rigaud (1999), "Extraction of the BSIM3 1/f noise parameters in CMOS transistors", Microelectronics Journal, 30(2):199-205.

  24. JP Xu, PT Lai, YC Cheng (1999), "1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses", Journal of Applied Physics, 86(9):5203-5206.
    [ abstract]

  25. T Yoshitomi, H Kimijima, S Ishizuka, Y Miyahara, T Ohguro, E Morifuji, T Morimoto, HS Momose, Y Katsumata, H Iwai (1999), "A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation", Solid-State Electronics, 43(7):1219-1224.

    + 1998

  26. NV Dyakonova, ME Levinshtein, S Contreras, W Knap, Beaumont, P Gibart (1998), "Low-frequency noise in GaN", Semiconductors, 32(3):257-260.

  27. C Jakobson, I Bloom and Y Nemirovsky (1998), "1/f noise in CMOS transistors for analog applications from subthreshold to saturation", Solid-State Electronics, 42:1807-1817.

  28. SL Jang (1998), "Low-frequency 1/f noise model for short-channel LDD MOSFETs ", Solid-State Electronics, 42(6):891-899.

  29. ME Levinshtein, SL Rumyantsev, R Gaska, JW Yang, MS Shur (1998), "AlGaN/GaN high electron mobility field effect transistors with low 1/f noise", Applied Physics Letters, 73(8):1089-1091

  30. C Surya, W Wang, PT Lai (1998), "Characterization of flicker noise in N2O and NH3 nitrided MOSFETs due to low-energy Ar+ backsurface gettering", Semiconductor Science Technology, 13(7):792-795.

  31. DR Wolters, ATA Zegers-van Duijnhoven (1998), "Variation of the exponent of flicker noise in MOSFET", Solid-State Electronics, 42(5):803-808.
    [abstract]

    + 1997

  32. XY Chen (1997), Lattice scattering and 1/f noise in semiconductor Ph.D Thesis (Technische Universiteit Eindhoven).

  33. NV Dyakonova, ME Levinshtein, F Pascal, SL Rumyantsev (1997), "1/f noise in strongly doped n-type GaAs under band-band illumination conditions", Semiconductors, 31(7):728-732.

  34. ME Levinshtein (1997), "Nature of the 1/f noise in the main materials of semiconductor electronics: Si, GaAs, and SiC" , Physica Scripta, 69(1):79-84.

  35. Amikam Nemirovsky (1997), "A revised model for carrier trapping-detrapping 1/f noise", Solid-State Electronics, 41:1811-1818.

  36. DP Triantis (1997), "Induced gate noise in MOSFETs revisited: the submicron case", Solid-State Electronics, 41:1937-1942.

  37. AV Yakimov (1997), "Analysis of intensity fluctuations in filtered 1/f noise for detection of mobile defects in semiconductors", Radiophysics and Quantum Electronics, 40(9):774-779.

    + 1996

  38. M Aoki and M Kato (1996), "Hole induced 1/f noise increase in MOS transistors", IEEE Electron Device Letters, 17:118-120.

  39. E Simoen, C Claeys (1996), "The low-frequency noise behavior of silicon-on-insulator technologies", Solid-State Electronics, 39(7):949-960.

  40. P Viktorovitch, P Rojo-Romeo, JL Leclercq, X Letartre, Jacques Tardy, M Oustric, and M Gendry (1996), "Low Frequency Noise Sources in InAlAs/InGaAs MODFET's", IEEE Transactions on Electron Devices, 43(12):2085-.
    [ PDF]

    + 1994

  41. J Chang, AA Abidi and CR Vishwanathan (1994), "Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures", IEEE Transactions on Electron Devices, 41:1965-1971.

  42. Daniel M Fleetwood, Timothy L Meisenheimer, John Scofield (1994), "1/f noise and radiation effects in MOS devices", IEEE Transactions on Electron Devices, 41(11):1954-1964.

  43. X Li, C Barros, EP Vandamme, KL Vandamme (1994), "Parameter extraction and 1/f noise in a surface and a bulk type p-channel LDD MOSFET", Solid-State Electronics, 37:1853-1862.

  44. John Scofield, Nick Borland, Daniel Fleetwood (1994), "Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors", IEEE Transactions on Electron Devices, 41(11):?-?.

  45. Z Shi, JP Mieville and M Dutoit (1994), "Random telegraph signals in deep submicron n-MOSFETs", IEEE Transactions on Electron Devices, 41:1161-1168.

  46. MH Tsai (1994), "The impact of device scaling on the current fluctuation in MOSFETs", IEEE Transactions on Electron Devices, 41(11):?-?.

  47. MH Tsai and TP Ma (1994), "The impact of device scaling on the current fluctuations in MOSFET's", IEEE Transactions on Electron Devices, 41:1161-1168.

  48. LKJ Vandamme, Xiaosong Li and Dominique Riguad (1994), "1/f noise in MOS devices, mobility or number fluctuations?", IEEE Transactions on Electron Devices, 41:1936-1945.

    + 1993

  49. Xiaosong Li, LKJ Vandamme (1993), "An explanation of 1/f noise in LDD MOSFETs from the ohmic region to saturation", Solid-State Electronics,?:?-?.

  50. R Murowinski, G Linzhuang, MJ Deen (1993), "The effects of space radiation damage and temperature on the noise in CCDs and LDD MOS transistors", IEEE Transactions on Nuclear Science, 40(3):288-294.

    + 1992

  51. IS Bakshee, LA Karachevtseva, AV Lyubchenko, VA Petryakov, EA Salkov and BI Khizhnyak (1992), "Influence of compensating annealing on the 1/f noise in CdHgTe [Hg(1-x)Cd(x)Te, HgCdTe]", Sov. Phys. Semicond., 26:97-99.

  52. Xiaosong Li, LKJ Vandamme (1992), "1/f noise in MOSFET as a diagnostic tool", Solid-State Electronics, 35:1477-1481.

  53. Y Zhu (1992), "A new 1/f noise model for metal-oxide-semiconductor field-effect transistors in saturation and deep saturation", Journal of Applied Physics, 72:5990-5998.

  54. Y Zhu, MJ Deen and TM Kleinpenning (1992), "A new 1/f noise model for Metal-Oxide-Semiconductor Field-Effect transistors in saturation and deep saturation", Journal of Applied Physics, 72(12):5990-5998.

    + 1991

  55. ZH Fang, A Chovet, QP Zhu and JN Zhao (1991), "Theory and applications of 1/f trapping noise in MOSFETs for the whole biasing ranges", Solid-State Electronics, 34:327-333.

  56. Munecazu Tacano (1991), "A new approach to the Hooge noise parameter for 1/f noise in semiconductors", Solid-State Electronics, 34:917-918.

    + 1990

  57. FN Hooge (1990), "The relation between 1/f noise and number of electrons", Physica B, 162:344-?.

  58. KK Hung, PK Ko, C Hu and YC Cheng (1990), "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors", IEEE Transactions on Electron Devices, 37:654-665.

  59. M Peransin, P Vignaud, D Rigaud, LKJ Vandamme (1990), "1/f noise in MODFETs at low drain bias", IEEE Transactions on Electron Devices, 37:2250-2253.

  60. H Wong, YC Cheng (1990), "Gate dielectric dependent flicker noise in metal-oxide semiconductor transistors", Journal of Applied Physics, ?:?-? (Jan).

    + 1989

  61. Raj Jayaraman and Charles G. Sodini (1989), "1/f noise technique to extract the oxide trap density near the conduction band edge of silicon", IEEE Transactions on Electron Devices, 36:1773-1782.

  62. MJ Kirton, MJ Uren (1989), "Noise in solid-state microstructures: a new perspective on individual defects, interface states and low-frequency (1/f) noise", Advances in Physics, 38(4):367-468.

  63. VB Orlov, AV Yakimov (1989), "Anisotropic fluctuations of the carrier mobility and 1/f magnetoresistance noise in semiconductors", Sov. Phys. Semicond. 23:834-837.

  64. John H Scofield, TP Doerr, DM Fleetwood (1989), "Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors", IEEE Transactions on Nuclear Science, 36:1946-1953.

    + 1988

  65. I.S. Bakshee, M.Z. Kodalashvili, E.A. Salkov (or Sal'kov) and B.I. Khiznyak, "Study of the 1/f-type fluctuations of the Hall emf in n-type CdHgTe [Hg(1-x)Cd(x)Te, HgCdTe]", Sov. Phys. Semicond. , 22, 1377-1380 (1988).

  66. Z Celik-Butler, TY Hsiang (1988), "Determination of Si-SiO2 interface trap density by 1/f noise measurements", IEEE Transactions on Electron Devices, 35(10):1651-?.

  67. Q Peng (1988), "Channel length dependence of the 1/f noise in silicon metal-oxide-semiconductor field-effect transistors", Journal of Applied Physics, 64:907-912.

    + 1986

  68. RHM Clevers (1986), "1/f noise and number fluctuation", Journal of Applied Physics, 60:3794-3796.

  69. JB Pendry, PD Kirkman, E Castano (1986), "Electrons at disordered surfaces and 1/f noise", Physical Review Letters, 57(23):2983-2986.
    [abstract]

  70. C Surya, TY Hsiang (1986), "Theory and experiment on the 1/fgamma noise in p-channel metal-oxide-semiconductor field-effect transistor at low drain bias", Physical Review B, 33:4898-4905.

    + 1985

  71. Z Celik, TY Hsiang (1985), "Study of 1/f noise in N-MOSFETs: linear region", IEEE Transactions on Electron Devices, 32:2797-?.

  72. MJ Uren, DJ Day and MJ Kirton (1985), "1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors", Applied Physics Letters, 47:1195-?.

    + 1984

  73. VB Orlov, AV Yakimov (1984), "Influence of the charge carriers scattering mechanism on the 1/f noise intensity in doped semiconductors", Physica B, 125:314-?.

  74. G Reimbold (1984), "Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion-influence of interface states", IEEE Transactions on Electron Devices, 31(9):1190-?.

    + 1982

  75. FN Hooge (1982), "On expressions for 1/f noise in mobility", Physica B, 114:391-392.

  76. H Mikoshiba (1982), "1/f noise in n-channel silicon-gate MOS transistors", IEEE Transactions on Electron Devices, 29:965-970.

    + 1974

  77. TGM Kleinpenning (1974), "1/f noise in thermo EMF of intrinsic and extrinsic semiconductors", Physica, 77(1): 78-98.

    + 1973

  78. RS Ronen (1973), "Low-frequency 1/f noise in MOSFETS", RCA Review, 34(2):280-307.

    + 1972

  79. HS Fu, CT Sah (1972), "Theory and experiments on surface 1/f noise", IEEE Transactions on Electron Devices, 19(2):273-?

    + 1971

  80. FM Klaassen (1971), "Characterization of low 1/f noise in MOS transistors", IEEE Transactions on Electron Devices, 18(10):887-?

    + 1970

  81. ST Hsu (1970), "Surface state related 1/f noise in MOS transistors", Solid-State Electronics, 13(11): 1451-?

  82. FM Klaassen (1970), "On geometrical dependence of 1/f noise in MOS transistors", Philips Research Reports, 25(3):171-?

    + 1969

  83. FN Hooge (1969), "1/f noise is no surface effect", Physics Letters A, 29:139-?.

    + 1967

    G Abowitz, E Arnold, EA Leventha (1967), " Surface states and 1/f noise in MOS transistors", IEEE Transactions on Electron Devices, 14(11):775-?

    + 1966

  84. PH Handel (1966), "Contributions to the theory of 1/f noise in semiconductors", Stud. Cerc. Fiz., 18:993-1055.

    + 1957

  85. AL McWhorter (1957) , "1/f noise and germanium surface properties", in Semiconductor Surface Physics, (Univ. Pennsylvania Press), pp 207-228.

    + 1956

  86. AL McWhorter (1956), "1/f noise and related surface effects in germanium", in Semiconductor Surface Physics, ed. RH Kingston (Univ Penn Press).

    + 1932

  87. B Schonwald (1932), "Electrical and optical properties of semiconductors" (in German), Ann. Phys. 15:395-421.